Transistor constructions and processing methods

ABSTRACT

A transistor construction includes a first floating gate having a first conductive or semiconductive surface and a second floating gate having a second conductive or semiconductive surface. A dielectric region is circumferentially surrounded by the first surface. The region is configured to reduce capacitive coupling between the first and second surfaces. Another transistor construction includes a floating gate having a cavity extending completely through the floating gate from a first surface of the floating gate to an opposing second surface of the floating gate. The floating gate otherwise encloses the cavity, which is filled with at least one dielectric. A method includes closing an upper portion of an opening in insulator material with a gate material during the deposition before filling a lower portion with the gate material. The depositing and closing provide an enclosed cavity within the lower portion of the opening.

RELATED PATENT DATA

This patent resulted from a continuation application of U.S. patentapplication Ser. No. 12/841,392, filed Jul. 22, 2010, entitled“Transistor Constructions and Processing Methods”, naming SeiichiAritome as inventor, which is a divisional application of U.S. patentapplication Ser. No. 11/707,692, filed Feb. 15, 2007, entitled“Transistor Constructions and Processing Methods”, naming SeiichiAritome as inventor, now U.S. Pat. No. 7,763,933, the disclosures ofwhich are incorporated by reference.

TECHNICAL FIELD

Transistor constructions, memory cell constructions, and transistorprocessing methods.

BACKGROUND

Memory devices provide data storage for electronic systems. One type ofnon-volatile memory is known as flash memory. A flash memory is a typeof electrically-erasable programmable read-only memory (EEPROM) that maybe erased and reprogrammed in blocks. Many modern personal computers usea BIOS stored in flash memory, sometimes called a flash BIOS. Wirelesselectronic devices may use flash memory since it enables a manufacturerto support new communication protocols as they become standardized andto remotely upgrade the device. Other uses for flash memory include USBflash drives, memory cards, digital audio players, digital cameras,GPS/navigation devices, etc.

Often, a flash memory includes a memory array that contains memory cellsarranged in row and column fashion. A memory cell may include a floatinggate field effect transistor capable of holding a charge, with multiplecells usually grouped into blocks. Cells within a block may beelectrically programmed by charging the floating gate. The charge may beremoved from the floating gate by a block erase program.

In a single level cell, the cell value may be determined by the presenceor absence of the charge on the floating gate. In a multilevel cell, thecell value may be determined by the amount of charge on the floatinggate in addition to the absence of charge. That is, the thresholdvoltage (V_(t)) of a cell decreases with increasing charge. Accordingly,when sensing the presence of charge, a higher range of thresholdvoltages may be indicative of one charge level while a lower range ofthreshold voltages may be indicative of a higher charge level. Thedifferent charge levels represent different stored values.

NAND is a basic architecture of flash memory, although a NORarchitecture may instead be used. A NAND cell unit includes a selectgate coupled in series to a serial combination of memory cells (with theserial combination often referred to as a NAND string). With the cellsserially combined in a string, understandably, scaling NAND memory cellsmay bring them in very close proximity. Interference between cells inthe form of capacitive coupling between floating gates may produceinaccurate sensing of threshold voltages and, thus, charge levels. Suchphenomenon is reported in Lee, et al., “Effects of Floating-GateInterference on NAND Flash Memory Cell Operation,” IEEE Electron Dev.Let., Vol. 23, No. 5, May 2002, pgs. 264-266.

Clearly then, a need exists in the art for improved NAND memory cellsand methods of forming NAND memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-9 illustrate cross-sectional views of a portion of a memoryarray during various stages of fabrication.

FIGS. 10 and 11 illustrate cross-sectional views of a portion of amemory array at an alternative stage of fabrication in comparison tothat shown in FIGS. 8 and 9.

FIG. 12 illustrates a cross-sectional view of a portion of a memoryarray with an alternative structure in comparison to that shown in FIG.7.

FIG. 13 is a simplified block diagram of a memory system.

FIG. 14 is a schematic of a NAND memory array.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Even though the problems addressed by the embodiments described hereinarise in the context of scaling NAND memory cells, it should beappreciated that the embodiments may be applicable in other contexts.Examples of other contexts include, but are not limited to, NOR memorycells and, generally, transistors including floating gates.

Primarily, two factors determine the extent of capacitive couplingbetween floating gates, namely, the distance between two given floatinggates and the capacitive area of the floating gates. Capacitive arearefers to the conductive (or semiconductive) surface area of a floatinggate that is available to participate in capacitive coupling withanother floating gate. Capacitive area might be described as the surfacearea of a floating gate “seen” from the perspective of another floatinggate. Capacitive area corresponds with known surface area calculationsused to determine capacitance of conventional capacitors.

Generally, a desire exists to reduce distance between floating gates inthe process of scaling flash memory cells. As a result, decreasingcapacitive coupling by increasing the distance between floating gatesmay not be practical. Various attempts were made to reduce capacitivecoupling by altering the geometry of floating gate surfaces. Forexample, Lee, et al. reports thinning a floating gate to reducecapacitive coupling, however, the thinning detrimentally reduces thecoupling ratio of the floating gate and requires higher programmingvoltages. Lee, et al. describes the coupling ratio as the controlgate-to-floating gate capacitance divided by total capacitance of thefloating gate. Thinning the floating gate reduces the controlgate-to-floating gate capacitance as well as the total capacitance anddecreases the coupling ratio.

In contrast, a transistor construction according to an embodiment of thepresent specification includes a first floating gate having a firstconductive or semiconductive surface and a second floating gate having asecond conductive or semiconductive surface. A dielectric region iscircumferentially surrounded by the first surface. The region isconfigured to reduce capacitive coupling between the first and secondsurfaces compared to capacitive coupling with an otherwise identicalfirst floating gate lacking the region.

By way of example, only the first floating gate might include adielectric region, and not the second floating gate. Such aconfiguration may somewhat reduce capacitive coupling even though thesecond floating gate maintains a conventional surface. Granted, reducingthe capacitive area of both the first and second floating gate mayfurther reduce capacitive coupling. Consequently, the transistorconstruction may further include another dielectric regioncircumferentially surrounded by the second surface. The other region maybe configured to reduce the capacitive coupling compared to capacitivecoupling with an otherwise identical second floating gate lacking theother region.

The dielectric region may include silicon oxide, silicon nitride, a gas,or combinations thereof. It is well known that a vacuum betweencapacitor plates may function as a dielectric. Air, as well as other gascompositions, may also function as a dielectric. Normally, the gaseousatmosphere within which the first and second floating gate may bemanufactured may be properly characterized as a dielectric even whenenclosed as a void within the floating gate. The dielectric region mayreside in a cavity extending into the first floating gate from the firstsurface. The cavity may extend completely through the first floatinggate from the first surface to an opposing surface of the first floatinggate. Instead, the cavity may extend only partly through a thickness ofthe first floating gate between the first surface and an opposingsurface of the first floating gate.

The transistor construction may further include a bit line operationallyassociated with both the first floating gate and the second floatinggate. The capacitive coupling may be reduced in a direction along thebit line. The transistor construction may include an active area formedin a semiconductor material, a gate dielectric over the active area, thefirst floating gate over the gate dielectric, an intergate dielectricover the first floating gate, and a control gate over the intergatedielectric. The floating gates may be included in respective flashmemory cells. Specifically, the floating gates may be included inrespective NAND transistors of the flash memory cells. As indicated,other memory architectures are conceivable.

In the context of this document, the term “semiconductor substrate” or“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

A transistor construction according to another embodiment may include afloating gate having a cavity extending completely through the floatinggate from a first surface of the floating gate to an opposing secondsurface of the floating gate. The floating gate otherwise encloses thecavity, which is filled with at least one dielectric.

By way of example, the surface from which the cavity extends may includea conductive surface and the transistor construction may further includeanother floating gate having third surface comprising a conductivesurface. The cavity and the dielectric may be configured to reducecapacitive coupling between the first and third surfaces. The transistorconstruction may include a bit line associated with both the floatinggate and the other floating gate. The capacitive coupling may be reducedin a direction along the bit line between the first and third surfaces.Selections for the dielectric and other components of the transistorconstruction may be as described for other embodiments herein.

In a further embodiment, a NAND flash memory construction has a firstNAND transistor including a first floating gate having a firstconductive or semiconductive surface and a second NAND transistorincluding a second floating gate having a second conductive orsemiconductive surface. The first surface is adjacent to the secondsurface. A first dielectric is recessed into the first floating gatefrom a central region of the first surface and a second dielectric isrecessed into the second floating gate from a central region of thesecond surface. The first dielectric and the second dielectric areconfigured to reduce capacitive coupling between the first and secondsurfaces compared to capacitive coupling between otherwise identicalfirst and second floating gates lacking the first and seconddielectrics.

By way of example, the first dielectric may extend completely throughthe first floating gate from the first surface to an opposing surface ofthe first floating gate, but the first floating gate otherwise enclosingthe first dielectric. The second floating gate and second dielectric maybe structured likewise. As an alternative, the first dielectric mayextend only partly through a thickness of the first floating gatebetween the first surface and an opposing surface of the first floatinggate. The second floating gate and second dielectric may be structuredlikewise.

FIGS. 6 and 7 illustrate structural features corresponding to some ofthe constructions described herein. FIG. 6 shows a cross-sectional viewof the transistor construction in FIG. 7 taken along lines 6-6 and FIG.7 shows a cross-sectional view of the transistor construction shown inFIG. 6 taken along lines 7-7. As will be appreciated from the discussionbelow, FIG. 6 represents a view of a cross-section taken along thecontrol gate or word line direction while FIG. 7 represents a view of across-section taken along the active area or bit line direction.

Specifically, FIGS. 6 and 7 show a semiconductor material 10 with anactive area formed therein including source/drain regions 44. A gatedielectric material 12 is over the active area and a floating gate isover gate dielectric material 12. The floating gate includes asupplemental gate material 14 and a gate material 36 on and in contactwith supplemental gate material 14. An interface 30 between the twomaterials delineates the extent of each material. The floating gate isoperationally associated with a pair of the source/drain regions 44.Notably, the floating gate has a cavity 38 extending completely throughthe floating gate from a surface of the floating gate to an opposingsurface of the floating gate. Otherwise, the floating gate enclosescavity 38.

An intergate dielectric material 40 is over the floating gate and acontrol gate material 42 is over intergate dielectric material 40.Filling cavity 38 with at least one dielectric, for example, siliconoxide, silicon nitride, a gas, or combinations thereof, may reduce thecapacitive area of the floating gates engaged in capacitive couplingbetween floating gates along the direction shown in FIG. 7. If cavity 38were not present and the floating gate instead included more gatematerial 36, then capacitive area between floating gates along thedirection shown in FIG. 7 would be larger. Correspondingly, capacitivecoupling would increase.

Notably, the capacitive area between floating gates along the directionshown in FIG. 6 is unchanged by the presence of cavity 38. The floatinggates in FIG. 6 “see” the same capacitive area on the surface of theother floating gates regardless of whether cavity 38 is present. In thecase of FIG. 6, portions of conductive control gate material 42 existbetween floating gates. Accordingly, capacitive coupling betweenfloating gates may be of less concern along the word line direction dueto a potential shielding effect of the conductive material. Also, in atransistor including the structures of FIGS. 6 and 7, cavity 38 does notaffect the control gate-to-floating gate capacitance even though cavity38 reduces the floating gate-to-floating gate portion of the totalcapacitance of the floating gate. As a result, the coupling ratio,mentioned above as described in Lee, et al., does not decrease and mayincrease.

Understandably, a variety of methods may be useful in forming thetransistor constructions and memory cells described herein. In oneembodiment, a transistor processing method includes forming an openingin an insulator material and depositing a conformal gate material withinthe opening. The opening has an upper portion that is narrowed withrespect to an elevationally lower portion of the opening such that themethod includes closing the narrowed upper portion with the gatematerial during the deposition before filling the lower portion with thegate material. The depositing and closing provide an enclosed cavitywithin the lower portion of the opening. The method includes forming afloating gate of a transistor using a section of the gate materialincluding the cavity. The cavity extends at least partly through thefloating gate.

By way of example, forming the opening may include exposing asupplemental gate material over a gate dielectric and depositing thegate material may include depositing the gate material on and in contactwith the supplemental gate material. Forming the opening in theinsulator material to provide a narrowed upper portion may beaccomplished by methods known to those of ordinary skill. However,forming the opening may instead include forming a core having opposing,inwardly inclined walls, forming the insulator material over theinclined walls, and removing the core from the insulator material overthe inclined walls. The removal may reveal the opening having thenarrowed upper portion.

Forming such a core having opposing, inwardly inclined walls maysimilarly be accomplished by a variety of methods known to those ofordinary skill. However, forming the core may instead include forming acore material, forming a resist mask pattern over the core material andusing the resist pattern as a mask. The resist pattern may haveopposing, inwardly inclined walls such that etching the core materialand transferring the resist pattern to the core material provides thecore with the opposing, inwardly inclined walls.

FIGS. 1-7 show one embodiment of a transistor processing method.Fabricating the structure shown in FIG. 1 may include forming gatedielectric material 12 over semiconductor material 10, formingsupplemental gate material 14 over gate dielectric material 12 andforming a core material 16 over supplemental gate material 14. Next, aresist may be formed over core material 16 and patterned to produce aresist mask pattern 18 suitable for use in subsequent etching.

Gate dielectric material 12 may be referred to as a tunnel oxide and mayinclude silicon dioxide, silicon oxynitride, or other compositions knownto those of ordinary skill. Supplemental gate material 14 may includepolysilicon as well as other semiconductor and/or conductor materialssuitable for a floating gate. Core material 16 may include siliconnitride or perhaps other materials that may be selectively removedrelative to surrounding materials as discussed below.

Resist mask pattern 18 shows trimmed portions 20 removed as aconsequence of resist exposure and/or development. This occurrenceduring exposure and/or development of resists produces rounded cornersat top edges of the resist or slanted walls at the top edges.Accordingly, resist patterns often have opposing, inwardly inclinedwalls at top edges of the resist. Those of ordinary skill normallyaccount for such undesired result by merely providing a resist thicknessof such an extent that, during etching and wearing down of a resist,trimmed portions 20 are not transferred to underlying material beingetched. Instead, a desire generally exists for structures resulting frometching to provide straight, vertical walls instead of inclined walls 22shown in FIG. 1. Accordingly, it is unique that embodiments hereinbeneficially utilize inclined walls 22.

FIG. 2 shows resist mask pattern 18 worn down as a result of etching atrench 24 through core material 16, supplemental gate material 14, andgate dielectric material 12 and into semiconductor material 10. Etchingtrench 24 may provide an opening in semiconductor material 10 forshallow trench isolation (STI) along with defining a width ofsupplemental gate material 14 and gate dielectric material 12. Transferof resist mask pattern 18 to core material 16, including opposing,inwardly inclined walls, is apparent in FIG. 2. Normally, transfer ofinclined walls 22 may be avoided by providing resist mask pattern 18with an increased thickness compared to that shown in FIG. 1 such thatit does not wear down to the extent shown in FIG. 2. However, in thepresent embodiment, an intent exists to transfer inclined walls 22 tocore material 16.

Formation of STI often includes oxidation of silicon-comprising surfacesfollowed by depositing STI fill material. In the circumstance wheresemiconductor material 10 and supplemental gate material 14 includesilicon, an insulator 28 may be formed over such surfaces as shown inFIG. 3 by a standard STI oxidation process. Alternative processes may beused as taught by those of ordinary skill for different materials. Aninsulator material 26 may be deposited, filling trenches 24 shown inFIG. 2. One example of a suitable deposition process includes chemicalvapor deposition of a silicon oxide material using a plasma with adensity of at least 10¹⁰ ions/cm³. Normally, such a deposition isreferred to as a high density plasma (HDP) STI fill process.

Excess fill material may be removed, for example, by chemical-mechanicalpolishing (CMP) to produce the FIG. 3 structure and expose core material16. CMP may stop on silicon nitride of core material 16 due to aselectivity ratio of 1:20 in favor of removing HDP STI fill. Theselectivity ratio may be tuned on a number of known factors toaccommodate other materials.

With core material 16 exposed, it is susceptible to selective removal,for example, by wet etching. Hot phosphoric acid (H₃PO₄) etching asconventionally performed may be used to selectively remove siliconnitride of core material 16 instead of silicon oxide of insulatormaterial 26. Perhaps for varying compositions of silicon nitride andsilicon oxide. Other selective etching techniques are conceivable.Removing core material 16 from insulator material 26 over inclined wallsof core material 16 reveals an opening having an upper portion 32 thatis narrowed with respect to an elevationally lower portion 34 of theopening, such as shown in FIG. 4. FIG. 4 displays such opening afterdepositing a conformal gate material 36 within the opening. Gatematerial 36 closes the narrowed upper portion of the opening during thedeposition before filling the lower portion with gate material 36,providing an enclosed cavity 38 within the lower portion of the opening.

Gate material 36 and supplemental gate material 14 may be identical ordifferent, with interface 30 delineating the extent of each material.Formation of supplemental gate material 14 in advance of and separatefrom formation of gate material 36 allows protection of gate dielectricmaterial 12 during removal of core material 16 to produce the openingwith narrowed upper portion 32. Accordingly, the thickness ofsupplemental gate material 14 may be selected largely as a considerationof the thickness appropriate for protecting gate dielectric material 12.The shape and thickness of gate dielectric material 12 represents oneimportant consideration in ensuring transistor reliability.

Those of ordinary skill will immediately appreciate that cavity 38 or asimilar “keyhole” in gate material 36 represents a problem normallyavoided in deposition methods. Extensive discussion exists in the artpertaining to avoidance of “keyholes” by keeping the walls of openingsvertical and straight (or even outwardly inclined) and/or by controllingdeposition conditions. Accordingly, it is unique that embodiments hereinbeneficially utilize cavity 38 to reduce capacitive coupling.

FIG. 5 shows the FIG. 4 structure after removing excess gate material 36sufficiently to expose insulator material 26 and allowing an etch backof insulator material 26 and insulator 28 to the extent shown in FIG. 5.Gate material 36 removal may be performed by CMP and may stop prior toopening cavity 38.

FIGS. 6 and 7 show the structure of FIG. 5 after forming an intergatedielectric material 40 over the floating gate and forming a control gatematerial 42 over intergate dielectric material 40, followed by gatepatterning. Intergate dielectric material 40 may be a siliconoxide/silicon nitride/silicon oxide (ONO) composite dielectric material.Conventional high K factor (also known as dielectric constant or K)dielectric material having a K of greater than 7 may be used in place ofONO. Gate patterning etches spaces 54 shown in FIG. 7 through controlgate material 42, intergate dielectric material 40, gate material 36,and supplemental gate material 14 at least to the extent shown in FIG. 7and defines the length of the floating gates. Gate patterning alsoseparates control gate material 42 into word lines.

A variety of options exist following the stage of fabrication shown inFIGS. 6 and 7. Subsequent processing may involve formation of dielectricmaterial in spaces 54, formation of bit line contacts to the active areaand patterning of bit lines over control gate material 42. It may beappreciated from FIGS. 6 and 7 that etching spaces 54 exposes cavities38 in gate material 36. As a result, cavity 38 may be susceptible topartial or complete filling with subsequently formed solid dielectricmaterial in spaces 54.

The extent of cavity 38 filling may depend upon properties of thespecific solid dielectric material deposited and the type of deposition.However, expected reductions in capacitive coupling may still berealized regardless of whether cavity 38 is completely filled, partiallyfilled, or not filled with solid dielectric material. To the extent thatcavity 38 becomes partially or completely filled with semiconductor orconductor material during subsequent processing, the extent of reductionin capacitive coupling may be lessened.

As shown in FIG. 12, with an alternative structure in comparison to thatshown in FIG. 7, a cavity 58 might not extend completely through a gatematerial 56. Cavity 58 may reduce capacitive coupling essentially byincreasing the distance between adjacent conductive or semiconductivesurfaces by virtue of recessing the surface into cavity 58. That is,overall capacitive area does not change since cavity 58 does not extendcompletely through the floating gate. Instead, the cavity relocates partof the capacitive area to an increased distance between adjacent gatematerial 56 surfaces. Adjacent surfaces still “see” the same capacitivearea, but the distance between a portion of the surfaces increases.Geometries other than that shown in FIG. 12 are conceivable for a cavitythat does not extend completely through a floating gate.

Since distance between floating gates represents one of the two primaryfactors determining the extent of capacitive coupling, such aconfiguration may reduce capacitive coupling, through not to the extentachievable by forming the cavity completely through the floating gateand filling with a dielectric. Correspondingly, formation ofsemiconductor or conductor material in cavity 38 may lessen the extentof reduction in capacitive coupling otherwise achievable if cavity 38contains a dielectric. Considerations for filling cavity 58 withdielectric are similar to those discussed herein regarding fillingcavity 38.

As indicated previously, a vacuum or gas-containing void in cavity 38 or58 is expected to perform similarly to solid dielectric material inreducing capacitive coupling. FIGS. 8 and 9 show one embodiment thatincludes a solid dielectric material 46 and a gas in cavity 38. In thescenario shown in FIGS. 8 and 9, dielectric material 46 fills spaces 54and also deposits conformally on the interior surface of gate material36 formed by cavity 38. Dielectric material 46 might completely fillcavity 38 (not shown) or only partially fill cavity 38, leaving behindgas 48 as the remaining dielectric. Either configuration may produce areduction in capacitive coupling.

FIGS. 10 and 11 show another solid dielectric material 50 formed inspaces 54 and also partially filling cavity 38 to leave behind a gas 52,but in a configuration different from that shown in FIGS. 8 and 9.Specifically, dielectric material 50 does not deposit conformally on theinterior surfaces of gate material 36 formed by cavity 38. Instead,dielectric material 50 forms primarily on the lower horizontal interiorsurface of gate material 36 within cavity 38 as dielectric material 50begins to fill spaces 54. The configuration shown in FIGS. 10 and 11 fordielectric material 50 may result from a process that does not readilydeposit dielectric material 50 on the vertical and upper horizontalinterior surfaces of gate material 36 within cavity 38. Such aconfiguration may result from a “bottom-up” type of deposition process.

Regardless of the extent with which a cavity extends into a floatinggate and the extent to which a cavity in a floating gate is filled withsolid dielectric material, a variety of embodiments may be appreciatedfrom the discussion herein providing a reduction in capacitive couplingof floating gates. Even so, some embodiments provide more reduction incapacitive coupling in accordance with the principles described herein.

FIG. 13 is a simplified block diagram of a memory system 100, accordingto one embodiment. Memory system 100 includes an integrated circuitflash memory device 102 (e.g., a NAND memory device), that includes anarray of floating-gate memory cells 104, an address decoder 106, rowaccess circuitry 108, column access circuitry 110, control circuitry112, input/output (I/O) circuitry 114, and an address buffer 116. Memorysystem 100 includes an external microprocessor 120, or memorycontroller, electrically connected to memory device 102 for memoryaccessing as part of an electronic system. The memory device 102receives control signals from the processor 120 over a control link 122.The memory cells are used to store data that are accessed via a data(DQ) link 124. Address signals are received via an address link 126, andare decoded at address decoder 106 to access the memory array 104.Address buffer circuit 116 latches the address signals. The memory cellsmay be accessed in response to the control signals and the addresssignals.

FIG. 14 is a schematic of a NAND memory array 200. Such may be a portionof memory array 104 of FIG. 13. Memory array 200 includes word lines 202₁ to 202 _(N), and intersecting local bit lines 204 ₁ to 204 _(M). Thenumber of word lines 202 and the number of bit lines 204 may be eachsome power of two, for example, 256 word lines and 4,096 bit lines. Thelocal bit lines 204 may be coupled to global bit lines (not shown) in amany-to-one relationship.

Memory array 200 includes NAND strings 206 ₁ to 206 _(m). Each NANDstring includes floating gate transistors 208 ₁ to 208 _(N). Thefloating gate transistors are located at intersections of word lines 202and local bit lines 204. The floating gate transistors 208 representnon-volatile memory cells for storage of data. The floating gatetransistors 208 of each NAND string 206 are connected in seriessource-to-drain between a source select gate 210 and a drain select gate212. Each source select gate 210 is located at an intersection of alocal bit line 204 and a source select line 214, while each drain selectgate 212 is located at an intersection of a local bit line 204 and adrain select line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate 220 of each sourceselect gate 210 is connected to source select line 214.

The drain of each drain select gate 212 is connected to a local bit line204 for the corresponding NAND string at a drain contact 228. Forexample, the drain of drain select gate 212 ₁ is connected to the localbit line 204 ₁ for the corresponding NAND string 206 ₁ at drain contact228 ₁. The source of each drain select gate 212 is connected to thedrain of the last floating-gate transistor 208 of the corresponding NANDstring 206. For example, the source of drain select gate 212 ₁ isconnected to the drain of floating gate transistor 208 _(N) of thecorresponding NAND string 206 ₁.

Floating gate transistors 208 include a source 230 and a drain 232, afloating gate 234, and a control gate 236. Floating gate transistors 208have their control gates 236 coupled to a word line 202. A column of thefloating gate transistors 208 are those NAND strings 206 coupled to agiven local bit line 204. A row of the floating gate transistors 208 arethose transistors coupled to a given word line 202.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A charge storage transistor construction comprising: a charge storagetransistor comprising a tunnel dielectric, charge storage material overthe tunnel dielectric, control gate material over the charge storagematerial, and dielectric material between the control gate material andthe charge storage material; and the charge storage material verticallyencircling a cavity within the charge storage material, none of thecontrol gate material being in the cavity.
 2. The construction of claim1 wherein a solid dielectric is within the cavity.
 3. The constructionof claim 2 wherein the solid dielectric forms a vertically orientedcirclet within the cavity.
 4. The construction of claim 3 wherein thesolid dielectric partially fills the cavity.
 5. The construction ofclaim 2 wherein the solid dielectric partially fills the cavity.
 6. Theconstruction of claim 1 wherein a gas dielectric is within the cavity.7. The construction of claim 1 wherein a solid dielectric and a gasdielectric are within the cavity.
 8. The construction of claim 7wherein, by volume, there is more gas dielectric within the cavity thanthere is solid dielectric.
 9. The construction of claim 7 wherein, byvolume, there is less gas dielectric within the cavity than there issolid dielectric.
 10. The construction of claim 7 wherein the soliddielectric is received in uppermost and lowermost portions of thecavity.
 11. A charge storage transistor construction comprising: acharge storage transistor comprising a tunnel dielectric, charge storagematerial over the tunnel dielectric, control gate material over thecharge storage material, and dielectric material between the controlgate material and the charge storage material; and the charge storagematerial vertically encircling a cavity within the charge storagematerial; a solid dielectric and a gas dielectric being within thecavity; the solid dielectric being in uppermost and lowermost portionsof the cavity; with respect to a lateral center of the cavity, the soliddielectric in the uppermost portion of the cavity being verticallythicker in all portions of the cavity than is the solid dielectric inthe lowermost portion of the cavity.
 12. The construction of claim 10wherein, in a planar lateral and vertical cross-section, the gasdielectric is bounded by four interconnected straight lines.
 13. Theconstruction of claim 12 wherein the gas dielectric is bounded by arectangle.
 14. The construction of claim 7 wherein, in a planar lateraland vertical cross-section, the solid dielectric is wider in a lowerportion of the cavity than in an upper portion of the cavity.
 15. Theconstruction of claim 7 comprising, by volume, more gas dielectric in anupper half of the cavity than in a lower half of the cavity.
 16. A acharge storage transistor construction comprising: a charge storagetransistor comprising a tunnel dielectric, charge storage material overthe tunnel dielectric, control gate material over the charge storagematerial, and dielectric material between the control gate material andthe charge storage material; and the charge storage material verticallyencircling two cavities within the charge storage material.
 17. Theconstruction of claim 16 wherein, in a planar lateral and verticalcross-section, the encircling charge storage material is of an I-beamcross-sectional shape.
 18. The construction of claim 17 wherein theI-beam cross-sectional shape is thicker across the bottom than acrossthe top.
 19. Integrated circuitry comprising: a pair of adjacent linesrespectively comprising a tunnel dielectric, longitudinally spacedcharge storage constructions over the tunnel dielectric, control gatematerial longitudinally extending over the spaced charge storageconstructions, and dielectric material between the control gate materialand the charge storage constructions; and the spaced charge storageconstructions respectively comprise charge storage material thatvertically encircles two cavities within the charge storage material; ina planar lateral and vertical cross-section, the encircling chargestorage material being of an I-beam cross-sectional shape. 20.Integrated circuitry comprising: a pair of adjacent lines respectivelycomprising a tunnel dielectric, longitudinally spaced charge storageconstructions over the tunnel dielectric, control gate materiallongitudinally extending over the spaced charge storage constructions,and dielectric material between the control gate material and the chargestorage constructions; and the spaced charge storage constructionsrespectively comprise charge storage material that vertically encirclesa cavity within the charge storage material; in a planar lateral andvertical cross-section, gas dielectric being received on spaced opposinglateral side portions of the respective line separated at least by thecharge storage material.
 21. The integrated circuitry of claim 20wherein the separated gas dielectrics are of equal volume.
 22. Theintegrated circuitry of claim 20 wherein that portion of the chargestorage material that separates the gas dielectrics is laterallycentered relative to said cross-section.
 23. A charge storage transistorconstruction comprising: a charge storage transistor comprising a tunneldielectric, charge storage material over the tunnel dielectric, controlgate material over the charge storage material, and dielectric materialbetween the control gate material and the charge storage material, thecharge storage material comprising a length and a width; and a cavity inthe charge storage material that is entirely vertically encircled by thecharge storage material along all of the length and all of the width ofthe charge storage material.
 24. A charge storage transistorconstruction comprising: a charge storage transistor comprising a tunneldielectric, charge storage material over the tunnel dielectric, controlgate material over the charge storage material, dielectric materialbetween the control gate material and the charge storage material; andthe charge storage material vertically encircling a cavity within thecharge storage material, the cavity extending completely laterallythrough the charge storage material.
 25. A charge storage transistorconstruction comprising: a charge storage transistor comprising a tunneldielectric, charge storage material over the tunnel dielectric, controlgate material over the charge storage material, dielectric materialbetween the control gate material and the charge storage material, and apair of source/drain regions having portions that are received laterallyof the charge storage material; and the charge storage materialvertically encircling a cavity within the charge storage material, thecavity having opposing laterally outermost edges at least one of whichis elevationally over one of the source/drain regions.
 26. Theconstruction of claim 25 wherein the cavity extends completely laterallythrough the charge storage material laterally between the pair ofsource/rain regions.